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| 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features 1) Low VCE(sat). VCE(sat) = 0.5V(Typ.) IC / IB = 2A / 0.2A 2) Complements the 2SB1188 / 2SB1182 / 2SB1240. External dimensions (Unit : mm) 2SD1766 0.50.1 4.5+0.2 -0.1 1.60.1 1.5 +0.2 -0.1 2SD1758 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 4.00.3 2.5 +0.2 -0.1 5.5+0.3 -0.1 1.00.2 0.4 +0.1 -0.05 0.40.1 1.50.1 0.75 0.9 2.30.2 0.650.1 0.40.1 1.50.1 0.50.1 3.00.2 2.30.2 0.55 0.1 1.00.2 Abbreviated symbol : DB (1) (2) (3) Structure Epitaxial planar type NPN silicon transistor ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SD1862 6.80.2 2.50.2 0.65Max. 1.0 0.50.1 (1) (2) (3) 2.54 2.54 1.05 0.450.1 ROHM : ATV Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Collector power dissipation Limits 40 32 5 2 2.5 0.5 2 PC 1 10 1 150 -55 to +150 Unit V V V A (DC) A (Pulse) 14.50.5 4.40.2 0.9 (1) Emitter (2) Collector (3) Base 1 2SD1766 2SD1758 2SD1862 2 3 W W W (Tc=25C) W C C Junction temperature Storage temperature Tj Tstg 1 Single pulse, Pw=20ms 2 When mounted on a 40x40x0.7 mm ceramic board. 3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager. Rev.A 2.5 (1) (2) (3) 9.50.5 0.9 1.5 1/3 2SD1766 / 2SD1758 / 2SD1862 Transistors Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio 2SD1766,2SD1758, Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 5 - - 82 120 - - - Typ. - - - - - - - 0.5 100 30 Max. - - - 1 1 390 390 0.8 - - Unit V V V IC=50A IC=1mA IE=50A VCB=20V VEB=4V Conditions A A - V MHz pF VCE=3V, IC=0.5A IC/IB=2A/0.2A VCE=5V, IE= -500mA, f=100MHz VCB=10V, IE=0A, f=1MHz 2SD1862 Collector-emitter saturation voltage Transition frequency Output capacitance Measured using pulse current. Packaging specifications and hFE Package Code Taping T100 1000 - - TL 2500 - - TV2 2500 - - Type 2SD1766 2SD1758 2SD1862 hFE PQR PQR QR Basic ordering unit (pieces) hFE values are classified as follows : Item hFE P 82 to 180 Q 120 to 270 R 180 to 390 Electrical characteristic curves 0.5 2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) 1000 500 200 100 50 20 10 5 2 1 0 Ta=25C VCE=3V Ta=25C 2.7mA 2.4mA 2.1mA 1.8mA DC CURRENT GAIN : hFE Ta=25C 3.0mA 0.4 500 0.3 200 VCE=3V 1V 1.5mA 1.2mA 0.2 100 0.9mA 0.1 0.6mA 0.3mA 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IB=0A 0 0.4 0.8 1.2 1.6 2.0 20 5 10 20 50 100 200 500 1A 2A BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current Rev.A 2/3 2SD1766 / 2SD1758 / 2SD1862 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat) (V) 500 TRANSITION FREQUENCY : fT (MHz) Ta=25C 2 1000 Ta=25C 500 Ta=25C VCE=5V 1 IC/IB=10 0.5 200 200 100 IC/IB=50 100 0.2 50 20 50 0.1 20 5 10 10 20 50 100 200 500 1A 2A 5 10 20 50 100 200 500 1A 2A 20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1A COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Transition frequency vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 500 Cib 200 100 50 Cob COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Ta=25C f=1MHz IE=0A IC=0A 5 2 1 0.5 0.2 0.1 0.05 Ta=25C Single nonrepetitive 0.02 pulse 0.01 0.1 0.2 0.5 1 5 2 1 0.5 0.2 0.1 0.05 PW =100ms Pw=10ms 100ms DC 20 10 0.5 1 2 5 10 20 2 5 10 20 50 Tc=25C Single nonrepetitive 0.02 pulse 0.01 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Safe operating area (2SD1766) Fig.9 Safe operating area (2SD1758) 3 2 COLLECTOR CURRENT : IC (A) Pw 1 0.5 Ic Max Ic Max Pulse =1 0m s s Pw DC m 00 =1 0.2 0.1 0.05 Ta=25C Single nonrepetitive pulse 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1862) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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